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IXFB30N120P

produsen:
IXYS
Deskripsi:
MOSFET N-CH 1200V 30A PLUS264
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
310 nC @ 10 V
Rds On (Max) @ Id, Vgs:
350mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Paket:
Tabung
Drain to Source Voltage (Vdss):
1200 V
Vg (Maks):
±20V
Product Status:
Active
Kapasitansi Input (Ciss) (Maks) @ Vds:
22500 pF @ 25 V
Mounting Type:
Through Hole
Seri:
HiPerFET™, Kutub
Supplier Device Package:
PLUS264™
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
1250W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFB30
Pengantar
N-Channel 1200 V 30A (Tc) 1250W (Tc) Melalui Lubang PLUS264TM
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