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IXFN210N30P3

produsen:
IXYS
Deskripsi:
MOSFET N-CH 300V 192A SOT227B
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Kategori:
Produk Semikonduktor Diskrit Transistor FET, MOSFET FET tunggal, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Paket / Kasus:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
268 nC @ 10 V
Rds Aktif (Maks) @ Id, Vgs:
14,5mOhm @ 105A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
16200 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Polar3™
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
192A (Tc)
Power Dissipation (Max):
1500W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN210
Pengantar
N-Channel 300 V 192A (Tc) 1500W (Tc) Dudukan Sasis SOT-227B
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