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IXFA3N120

produsen:
IXYS
Deskripsi:
MOSFET N-CH 1200V 3A TO263
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Fitur FET:
-
Vgs(th) (Max) @ Id:
5V @ 1.5mA
Suhu operasi:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Biaya Gerbang (Qg) (Maks) @ Vgs:
39 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 1.5A, 10V
Tipe FET:
Saluran-N
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1050 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™
Supplier Device Package:
TO-263AA (IXFA)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Power Dissipation (Max):
200W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFA3
Pengantar
N-Channel 1200 V 3A (Tc) 200W (Tc) Permukaan Gunung TO-263AA (IXFA)
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