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IXFH12N90P

produsen:
IXYS
Deskripsi:
MOSFET N-CH 900V 12A TO247AD
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Kategori:
Produk Semikonduktor Diskrit Transistor FET, MOSFET FET tunggal, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
Rds On (Max) @ Id, Vgs:
900mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
900 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3080 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-247AD (IXFH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
380W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH12
Pengantar
N-Channel 900 V 12A (Tc) 380W (Tc) Melalui Lubang TO-247AD (IXFH)
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