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PSMN1R0-30YLDX

produsen:
Nexeria USA Inc.
Deskripsi:
MOSFET N-CH 30V 100A LFPAK56
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 2mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Paket / Kasus:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
121.35 nC @ 10 V
Rds Aktif (Maks) @ Id, Vgs:
1,02mOhm @ 25A, 10V
FET Type:
N-Channel
Tegangan Drive (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8598 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
238W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R0
Pengantar
N-Channel 30 V 100A (Tc) 238W (Tc) LFPAK56, Power-SO8
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