Mengirim pesan
Rumah > Produk > Produk Semikonduktor Diskrit > BUK9Y65-100E,115

BUK9Y65-100E,115

produsen:
Nexeria USA Inc.
Deskripsi:
MOSFET N-CH 100V 19A LFPAK56
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Kategori:
Produk Semikonduktor Diskrit Transistor FET, MOSFET FET tunggal, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Paket / Kasus:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 5 V
Rds Aktif (Maks) @ Id, Vgs:
63,3mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1523 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Power Dissipation (Max):
64W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK9Y65
Pengantar
N-Channel 100 V 19A (Tc) 64W (Tc) LFPAK56, Power-SO8
Kirim RFQ
Stok:
MOQ: