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BUK9Y25-60E,115

produsen:
Nexeria USA Inc.
Deskripsi:
MOSFET N-CH 60V 34A LFPAK56
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Kategori:
Produk Semikonduktor Diskrit Transistor FET, MOSFET FET tunggal, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Paket / Kasus:
SC-100, SOT-669
Biaya Gerbang (Qg) (Maks) @ Vgs:
12 nC @ 5 V
Rds On (Max) @ Id, Vgs:
21.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Power Dissipation (Max):
65W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK9Y25
Pengantar
N-Channel 60 V 34A (Tc) 65W (Tc) LFPAK56, Power-SO8
Kirim RFQ
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