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BSN20BKR

produsen:
Nexeria USA Inc.
Deskripsi:
MOSFET N-CH 60V 265MA TO236AB
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.49 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
2.8Ohm @ 200mA, 10V
FET Type:
N-Channel
Tegangan Drive (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Tiriskan ke Tegangan Sumber (Vdss):
60 V
Vgs (Max):
±20V
Status Produk:
Aktif
Input Capacitance (Ciss) (Max) @ Vds:
20.2 pF @ 30 V
Tipe pemasangan:
Permukaan Gunung
Series:
-
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
265mA (Ta)
Power Dissipation (Max):
310mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSN20
Pengantar
N-Channel 60 V 265mA (Ta) 310mW (Ta) Permukaan Gunung TO-236AB
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