Filter
Filter
Transistor
| Gambar | Bagian # | Deskripsi | produsen | Stok | RFQ | |
|---|---|---|---|---|---|---|
|
IRF7342TRPBF |
MOSFET MOSFT GANDA PCh -55V 3.4A
|
IR / Infineon
|
|
|
|
|
|
FDG6332C |
Parit Daya Saluran N&P MOSFET 20V
|
Satuan
|
|
|
|
|
|
SI2365EDS-T1-GE3 |
MOSFET -20V 32mOhm@4.5V 5.9A P-Ch G-III
|
Semikonduktor Vishay
|
|
|
|
|
|
SIRA14DP-T1-GE3 |
MOSFET 30V 5.1mOhm@10V 20A N-Ch G-IV
|
Semikonduktor Vishay
|
|
|
|
|
|
SI1050X-T1-GE3 |
MOSFET 8.0V 1.34A 0.236W 86mohm @ 4.5V
|
Semikonduktor Vishay
|
|
|
|
|
|
IRFBC40PBF |
MOSFET N-Chan 600V 6.2 Amp
|
Semikonduktor Vishay
|
|
|
|
|
|
SI9926CDY-T1-GE3 |
MOSFET 20V 8.0A 3.1W 18mohm @ 4.5V
|
Semikonduktor Vishay
|
|
|
|
|
|
MTI85W100GC |
MOSFET Jembatan Penuh 3 Fase dengan MOSFET Parit
|
IXYS
|
|
|
|
|
|
FDS6680AS |
MOSFET 30V N-Channel PowerTrench SyncFET
|
Semikonduktor Fairchild
|
|
|
|
|
|
Si9435BDY-T1-E3 |
MOSFET 30V 5,7A 0,042Ohm
|
Semikonduktor Vishay
|
|
|
|
|
|
ZXMP4A16GTA |
MOSFET 40V P-Chnl UMOS
|
Dioda terintegrasi
|
|
|
|
|
|
IPD90N04S4-03 |
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
|
Teknologi Infineon
|
|
|
|
|
|
IRL7486MTRPbF |
MOSFET 40V HEXFET N-Saluran Tunggal
|
IR / Infineon
|
|
|
|
|
|
SPW32N50C3 |
MOSFET N-Ch 560V 32A TO247-3 CoolMOS C3
|
Teknologi Infineon
|
|
|
|
|
|
FCH76N60NF |
MOSFET 600V N-Chan MOSFET FRFET, SupreMOS
|
Semikonduktor Fairchild
|
|
|
|
|
|
IRFP27N60KPBF |
MOSFET N-Chan 600V 27 Amp
|
Semikonduktor Vishay
|
|
|
|
|
|
IPW65R080CFD |
MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
|
Teknologi Infineon
|
|
|
|
|
|
IPW60R099C6 |
MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6
|
Teknologi Infineon
|
|
|
|
|
|
IPB60R099C6 |
MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6
|
Teknologi Infineon
|
|
|
|
|
|
FDA50N50 |
MOSFET MOSFET 500V NCH
|
Semikonduktor Fairchild
|
|
|
|
|
|
FDPF18N20FT |
MOSFET UniFET 200V
|
Semikonduktor Fairchild
|
|
|
|
|
|
FDD86540 |
MOSFET 60V 50A 4.1ohm NCh PowerTrench MOSFET
|
Semikonduktor Fairchild
|
|
|
|
|
|
BSC014N04LS |
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
|
Teknologi Infineon
|
|
|
|
|
|
SIA906EDJ-T1-GE3 |
MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
|
Semikonduktor Vishay
|
|
|
|
|
|
SI2371EDS-T1-GE3 |
MOSFET -30V 45mOhm@10V -4.8A P-Ch G-III
|
Semikonduktor Vishay
|
|
|
|
|
|
PMV213SN,215 |
MOSFET TAPE13 PWR-MOS
|
pengalaman
|
|
|
|
|
|
BSS138PS,115 |
MOSFET N-CH 60 V 320 mA
|
pengalaman
|
|
|
|
|
|
BSC014N06NS |
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
|
Teknologi Infineon
|
|
|
|
|
|
FDY1002PZ |
MOSFET 2P-CH 20V 0,83A SC89-6
|
Satuan
|
|
|
|
|
|
FDMB3800N |
MOSFET 2N-CH 30V 4.8A MIKROFET
|
Satuan
|
|
|
|
|
|
FDD8424H |
MOSFET N/P-CH 40V 9A/6.5A DPAK
|
Satuan
|
|
|
|
|
|
IRF7341TRPBF |
MOSFET 2N-CH 55V 4.7A 8-SOIC
|
Teknologi Infineon
|
|
|
|
|
|
FDS89161 |
MOSFET 2N-CH 100V 2.7A 8-SOIC
|
Satuan
|
|
|
|
|
|
FDMQ8403 |
MOSFET 4N-CH 100V 3.1A 12-MLP
|
Satuan
|
|
|
|
|
|
DMN26D0UDJ-7 |
MOSFET 2N-CH 20V 0,24A SOT963
|
Dioda terintegrasi
|
|
|
|
|
|
DMG1024UV-7 |
MOSFET 2N-CH 20V 1.38A SOT563
|
Dioda terintegrasi
|
|
|
|
|
|
DMC3021LSD-13 |
MOSFET N/P-CH 30V 8.5A/7A 8SO
|
Dioda terintegrasi
|
|
|
|
|
|
FDS9926A |
MOSFET 2N-CH 20V 6.5A 8SOIC
|
Satuan
|
|
|
|
|
|
IRF7317TRPBF |
MOSFET N/P-CH 20V 8-SOIC
|
Teknologi Infineon
|
|
|
|
|
|
NTHD4102PT1G |
MOSFET 2P-CH 20V 2.9A CHIPFET
|
Satuan
|
|
|
|
|
|
DMP3036SSD-13 |
MOSFET 2P-CH 30V 10.6A 8-JADI
|
Dioda terintegrasi
|
|
|
|
|
|
FDS6898AZ |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
Satuan
|
|
|
|
|
|
FDMS3660S |
MOSFET 2N-CH 30V 13A/30A 8-PQFN
|
Satuan
|
|
|
|
|
|
IRF7380TRPBF |
MOSFET 2N-CH 80V 3.6A 8-SOIC
|
Teknologi Infineon
|
|
|
|
|
|
FDS4935A |
MOSFET 2P-CH 30V 7A 8SOIC
|
Satuan
|
|
|
|
|
|
DMC2400UV-7 |
MOSFET N/P-CH 20V SOT563
|
Dioda terintegrasi
|
|
|
|
|
|
DMG6601LVT-7 |
MOSFET N/P-CH 30V 26TSOT
|
Dioda terintegrasi
|
|
|
|
|
|
NTJD4152PT1G |
MOSFET 2P-CH 20V 0,88A SOT-363
|
Satuan
|
|
|
|
|
|
NDC7002N |
MOSFET 2N-CH 50V 0,51A SSOT6
|
Satuan
|
|
|
|
|
|
DMN5L06DWK-7 |
MOSFET 2N-CH 50V 0,305A SOT-363
|
Dioda terintegrasi
|
|
|