FQA19N60
produsen:
Satuan
Deskripsi:
POWER FIELD-EFFECT TRANSISTOR, 1
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
Status Produk:
Aktif
Mounting Type:
Through Hole
Paket:
Besi
Input Capacitance (Ciss) (Max) @ Vds:
3600 pF @ 25 V
Seri:
-
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5V @ 250µA
Supplier Device Package:
TO-3PN
Rds On (Max) @ Id, Vgs:
380mOhm @ 9.3A, 10V
Mfr:
onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
300W (Tc)
Package / Case:
TO-3P-3, SC-65-3
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
18.5A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Pengantar
N-Channel 600 V 18.5A (Tc) 300W (Tc) Melalui Lubang TO-3PN
Kirim RFQ
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