IPW60R120P7
produsen:
Teknologi Infineon
Deskripsi:
MOSFET Daya Saluran-N
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
1544 pF @ 400 V
Series:
CoolMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 410µA
Supplier Device Package:
PG-TO247-3
Rds On (Max) @ Id, Vgs:
120mOhm @ 8.2A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Disipasi Daya (Maks):
95W (Tc)
Package / Case:
TO-247-3
Tiriskan ke Tegangan Sumber (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
teknologi:
MOSFET (Oksida Logam)
FET Feature:
-
Pengantar
N-Channel 600 V 26A (Tc) 95W (Tc) Melalui Lubang PG-TO247-3
Kirim RFQ
Stok:
MOQ: