IXFP22N65X2
produsen:
IXYS
Deskripsi:
MOSFET N-CH 650V 22A TO220
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Rds On (Max) @ Id, Vgs:
160mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2310 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
TO-220-3
Mfr:
IXYS
Arus - Pengurasan Berkelanjutan (Id) @ 25°C:
22A (Tc)
Power Dissipation (Max):
390W (Tc)
teknologi:
MOSFET (Oksida Logam)
Base Product Number:
IXFP22
Pengantar
N-Channel 650 V 22A (Tc) 390W (Tc) Melalui lubang TO-220-3
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IXFN32N120P |
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