IRFB38N20DPBF
produsen:
Teknologi Infineon
Deskripsi:
MOSFET N-CH 200V 43A TO220AB
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Paket / Kasus:
KE-220-3
Gate Charge (Qg) (Max) @ Vgs:
91 nC @ 10 V
Rds Aktif (Maks) @ Id, Vgs:
54mOhm @ 26A, 10V
FET Type:
N-Channel
Tegangan Drive (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220AB
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
43A (Tc)
Power Dissipation (Max):
3.8W (Ta), 300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFB38
Pengantar
N-Channel 200 V 43A (Tc) 3.8W (Ta), 300W (Tc) Melalui lubang TO-220AB
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