SI4154DY-T1-GE3
produsen:
Vishay Siliconix
Deskripsi:
MOSFET N-CH 40V 36A 8SO
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Kapasitansi Input (Ciss) (Maks) @ Vds:
4230 pF @ 20 V
Mounting Type:
Surface Mount
Seri:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Disipasi Daya (Maks):
3,5W (Ta), 7,8W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4154
Pengantar
N-Channel 40 V 36A (Tc) 3,5W (Ta), 7,8W (Tc) Permukaan Mount 8-SOIC
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| Gambar | Bagian # | Deskripsi | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
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|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
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SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
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|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
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|
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|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
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|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
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|
SISA72DN-T1-GE3 |
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|
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