FDB52N20TM
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Rds On (Max) @ Id, Vgs:
49mOhm @ 26A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Product Status:
Active
Kapasitansi Input (Ciss) (Maks) @ Vds:
2900 pF @ 25 V
Mounting Type:
Surface Mount
Seri:
UniFET™
Supplier Device Package:
D²PAK (TO-263)
Mfr:
Satuan
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Disipasi Daya (Maks):
357W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB52N20
Pengantar
N-Channel 200 V 52A (Tc) 357W (Tc) Permukaan Gunung D2PAK (TO-263)
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