FQP12N60C
produsen:
Satuan
Deskripsi:
MOSFET N-CH 600V 12A TO220-3
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Kategori:
Produk Semikonduktor Diskrit Transistor FET, MOSFET FET tunggal, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Paket / Kasus:
KE-220-3
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Rds On (Max) @ Id, Vgs:
650mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
2290 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
225W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP12
Pengantar
N-Channel 600 V 12A (Tc) 225W (Tc) Melalui Lubang TO-220-3
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