FQPF10N60C
produsen:
Satuan
Deskripsi:
MOSFET N-CH 600V 9.5A TO220F
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
57 nC @ 10 V
Rds On (Max) @ Id, Vgs:
730mOhm @ 4.75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
2040 pF @ 25 V
Tipe pemasangan:
Melalui Lubang
Series:
QFET®
Paket Perangkat Pemasok:
KE-220F-3
Mfr:
onsemi
Arus - Pengurasan Berkelanjutan (Id) @ 25°C:
9.5A (Tc)
Power Dissipation (Max):
50W (Tc)
teknologi:
MOSFET (Oksida Logam)
Base Product Number:
FQPF10
Pengantar
N-Channel 600 V 9.5A (Tc) 50W (Tc) Melalui lubang TO-220F-3
Kirim RFQ
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