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SISA12ADN-T1-GE3

produsen:
Vishay Siliconix
Deskripsi:
MOSFET N-CH 30V 25A PPAK1212-8
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2070 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Paket Perangkat Pemasok:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Arus - Pengurasan Berkelanjutan (Id) @ 25°C:
25A (Tc)
Power Dissipation (Max):
3.5W (Ta), 28W (Tc)
teknologi:
MOSFET (Oksida Logam)
Base Product Number:
SISA12
Pengantar
N-Channel 30 V 25A (Tc) 3.5W (Ta), 28W (Tc) Permukaan Gunung PowerPAK® 1212-8
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