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SIR876ADP-T1-GE3

produsen:
Vishay Siliconix
Deskripsi:
MOSFET N-CH 100V 40A PPAK SO-8
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
Rds On (Max) @ Id, Vgs:
10.8mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Status Produk:
Aktif
Input Capacitance (Ciss) (Max) @ Vds:
1630 pF @ 50 V
Tipe pemasangan:
Permukaan Gunung
Series:
TrenchFET®
Paket Perangkat Pemasok:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Arus - Pengurasan Berkelanjutan (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
5W (Ta), 62.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR876
Pengantar
N-Channel 100 V 40A (Tc) 5W (Ta), 62.5W (Tc) Permukaan Gunung PowerPAK® SO-8
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