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DMT10H009SPS-13

produsen:
Dioda terintegrasi
Deskripsi:
MOSFET N-CH 100V PWRDI5060
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Kapasitansi Input (Ciss) (Maks) @ Vds:
2085 pF @ 50 V
Mounting Type:
Surface Mount
Seri:
-
Supplier Device Package:
PowerDI5060-8
Mfr:
Dioda terintegrasi
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 80A (Tc)
Disipasi Daya (Maks):
1,3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT10
Pengantar
N-Saluran 100 V 14A (Ta), 80A (Tc) 1,3W (Ta) Pemasangan di Permukaan PowerDI5060-8
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