RJP020N06T100
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-243AA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4 V
Rds On (Max) @ Id, Vgs:
240mOhm @ 2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
160 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
MPT3
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RJP020
Pengantar
N-Channel 60 V 2A (Ta) 500mW (Ta) Permukaan Gunung MPT3
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Gambar | Bagian # | Deskripsi | |
---|---|---|---|
![]() |
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
![]() |
RRR040P03TL |
MOSFET P-CH 30V 4A TSMT3
|
|
![]() |
RSR025P03TL |
MOSFET P-CH 30V 2.5A TSMT3
|
|
![]() |
RS1L120GNTB |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
![]() |
RUM003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
![]() |
RD3P130SPTL1 |
MOSFET P-CH 100V 13A TO252
|
|
![]() |
RD3H200SNTL1 |
MOSFET N-CH 45V 20A TO252
|
|
![]() |
RSR025N05TL |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
![]() |
RD3P050SNTL1 |
MOSFET N-CH 100V 5A TO252
|
|
![]() |
RQ3E100ATTB |
MOSFET P-CH 30V 10A/31A 8HSMT
|
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