IRFB4227PBF
produsen:
Teknologi Infineon
Deskripsi:
MOSFET N-CH 200V 65A TO220AB
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
98 nC @ 10 V
Rds On (Max) @ Id, Vgs:
24mOhm @ 46A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4600 pF @ 25 V
Tipe pemasangan:
Melalui Lubang
Series:
HEXFET®
Paket Perangkat Pemasok:
KE-220AB
Mfr:
Infineon Technologies
Arus - Pengurasan Berkelanjutan (Id) @ 25°C:
65A (Tc)
Power Dissipation (Max):
330W (Tc)
teknologi:
MOSFET (Oksida Logam)
Base Product Number:
IRFB4227
Pengantar
N-Channel 200 V 65A (Tc) 330W (Tc) Melalui lubang TO-220AB
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