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SI7101DN-T1-GE3

produsen:
Vishay Siliconix
Deskripsi:
MOSFET P-CH 30V 35A PPAK 1212-8
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Kategori:
Produk Semikonduktor Diskrit Transistor FET, MOSFET FET tunggal, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Paket / Kasus:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
102 nC @ 10 V
Rds Aktif (Maks) @ Id, Vgs:
7,2mOhm @ 15A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3595 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Power Dissipation (Max):
3.7W (Ta), 52W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI7101
Pengantar
P-Channel 30 V 35A (Tc) 3.7W (Ta), 52W (Tc) Permukaan Gunung PowerPAK® 1212-8
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