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SIR882ADP-T1-GE3

produsen:
Vishay Siliconix
Deskripsi:
MOSFET N-CH 100V 60A PPAK SO-8
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Kategori:
Produk Semikonduktor Diskrit Transistor FET, MOSFET FET tunggal, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Paket / Kasus:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8.7mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1975 pF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
5.4W (Ta), 83W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR882
Pengantar
N-Channel 100 V 60A (Tc) 5.4W (Ta), 83W (Tc) Permukaan Gunung PowerPAK® SO-8
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