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SUD19P06-60-GE3

produsen:
Vishay Siliconix
Deskripsi:
MOSFET P-CH 60V 18.3A TO252
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
Rds On (Max) @ Id, Vgs:
60mOhm @ 10A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1710 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
TO-252AA
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
18.3A (Tc)
Disipasi Daya (Maks):
2,3W (Ta), 38,5W (Tc)
Technology:
MOSFET (Metal Oxide)
Nomor produk dasar:
SUD19
Pengantar
P-Channel 60 V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Permukaan Gunung TO-252AA
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