FDS8880
produsen:
Satuan
Deskripsi:
MOSFET N-CH 30V 11.6A 8SOIC
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Kategori:
Produk Semikonduktor Diskrit Transistor FET, MOSFET FET tunggal, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Paket / Kasus:
8-SOIC (0,154", 3,90mm Lebar)
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Rds On (Max) @ Id, Vgs:
10mOhm @ 11.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1235 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
11.6A (Ta)
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS88
Pengantar
N-Channel 30 V 11.6A (Ta) 2.5W (Ta) Permukaan Mount 8-SOIC
Kirim RFQ
Stok:
MOQ: