SQM120P10_10M1LGE3
produsen:
Vishay Siliconix
Deskripsi:
MOSFET P-CH 100V 120A TO263
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Biaya Gerbang (Qg) (Maks) @ Vgs:
190 nC @ 10 V
Rds On (Max) @ Id, Vgs:
10.1mOhm @ 30A, 10V
Tipe FET:
Saluran-P
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Paket:
Tape & Reel (TR)
Tape Cut (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vg (Maks):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9000 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
TO-263 (D²Pak)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
375W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQM120
Pengantar
P-Channel 100 V 120A (Tc) 375W (Tc) Permukaan Gunung TO-263 (D2Pak)
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|---|---|---|---|
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2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
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SI7148DP-T1-E3 |
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SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
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IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
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SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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SUD50N04-8M8P-4GE3 |
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SISA72DN-T1-GE3 |
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