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SIR422DP-T1-GE3

produsen:
Vishay Siliconix
Deskripsi:
MOSFET N-CH 40V 40A PPAK SO-8
Kategori:
Produk Semikonduktor Diskrit
Spesifikasi
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Paket:
Tape & Reel (TR) Tape Cut (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
40 V
Vg (Maks):
±20V
Product Status:
Active
Kapasitansi Input (Ciss) (Maks) @ Vds:
1785 pF @ 20 V
Mounting Type:
Surface Mount
Seri:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
5W (Ta), 34.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR422
Pengantar
N-Channel 40 V 40A (Tc) 5W (Ta), 34.7W (Tc) Permukaan Gunung PowerPAK® SO-8
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