THGBMDG5D1LBAIL
produsen:
Toshiba
Deskripsi:
Memori Flash 4GB NAND EEPROM
Kategori:
Semikonduktor
Spesifikasi
Kategori Produk:
Memori flash
Gaya Pemasangan:
SMD/SMT
Paket / Kasus:
WFBGA-153
Tegangan Pasokan - Maks:
3,6 V
Ukuran memori:
4 GB
Kemasan:
Tray
Tegangan Pasokan - Min:
2.7 V
Tipe Memori:
NAND
Jangkauan suhu operasi:
- 25 C hingga + 85 C
Produsen:
TOSHIBA
Pengantar
THGBMDG5D1LBAIL,dari Toshiba, adalah Flash Memory. apa yang kami tawarkan memiliki harga yang kompetitif di pasar global,yang berada di bagian asli dan baru.Jika Anda ingin tahu lebih banyak tentang produk atau menerapkan harga yang lebih rendah, silakan hubungi kami melalui online chat atau kirim penawaran kepada kami!
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| Gambar | Bagian # | Deskripsi | |
|---|---|---|---|
|
|
TC58NVG3S0FTA00 |
Flash Memory 8Gb 3.3V SLC NAND Flash Memory EEPROM
|
|
|
|
THGBMFG7C1LBAIL |
Flash Memory 16GB NAND EEPROM
|
|
|
|
TC58NVG2S3ETA00 |
Flash Memory 4Gb 3.3V SLC NAND Flash Serial EEPROM
|
|
|
|
THGBMHG8C2LBAIL |
Flash Memory 32GB NAND EEPROM w/CQ
|
|
|
|
TC58NVG1S3ETAI0 |
Flash Memory 1Gb 3.3V SLC NAND Flash Serial EEPROM
|
|
|
|
THGBMFG6C1LBAIL |
Flash Memory 8GB NAND EEPROM
|
|
|
|
THGBMHG7C1LBAIL |
Flash Memory 16GB NAND EEPROM w/CQ
|
|
|
|
TC58NVG1S3ETA00 |
Flash Memory 1Gb 3.3V SLC NAND Flash Serial EEPROM
|
|
|
|
TH58NVG4S0FTA20 |
Flash Memory 3.3V 16Gbit NAND EEPROM
|
|
|
|
TH58NVG5S0FTAK0 |
Flash Memory 32Gb 3.3V IC Flash NAND EEPROM
|
|
|
|
TC58NVG0S3ETA00 |
Flash Memory 1Gb 3.3V SLC NAND Flash EEPROM
|
|
|
|
THGBMHG6C1LBAWL |
Flash Memory 8GB NAND EEPROM I-Temp
|
|
|
|
THGBMFG8C2LBAIL |
Flash Memory 32GB NAND EEPROM
|
|
|
|
TC58CVG1S3HRAIG |
Flash Memory 2Gb 3.3V SLC NAND Flash Serial
|
|
|
|
THGBMDG5D1LBAIT |
Flash Memory 4GB NAND EEPROM
|
|
|
|
THGBMHG9C4LBAIR |
Flash Memory 64GB NAND EEPROM w/CQ
|
|
|
|
TC58CVG2S0HRAIG |
Flash Memory 4Gb 3.3V SLC NAND Flash Serial
|
|
|
|
THGBMHG6C1LBAIL |
Flash Memory 8GB NAND EEPROM w/CQ
|
Kirim RFQ
Stok:
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